Nanosheets, or more generally, gate-all-around FETs, mark the next big shift in transistor structures at the most advanced nodes. David Fried, vice president of computational products at Lam Research, talks with Semiconductor Engineering explains the advantages of using these new types of transistors, along with myriad challenges at future nodes, particularly in the area of metrology.

The post Next-Gen Transistors appeared first on Semiconductor Engineering.

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